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Crystallographic texture of submicron thin aluminum nitride films on molybdenum electrode for suspended micro and nanosystems

: Sah, R.E.; Kirste, L.; Kirmse, H.; Mildner, M.; Wilde, L.; Kopta, S.; Knöbber, F.; Krieg, M.; Cimalla, V.; Lebedev, V.; Ambacher, O.


ECS journal of solid state science and technology : jss 2 (2013), No.4, pp.P180-P184
ISSN: 2162-8769
ISSN: 2162-8777
Journal Article
Fraunhofer IAF ()
Fraunhofer IPMS ()

The structural properties of piezoelectric AlN/Mo/AlN stacks have been investigated for obtaining an improved c-axis oriented, piezoelectric AlN thin film on Mo electrodes to be employed in suspended nano- and micromechanical devices. With increasing thickness of the AlN interlayer up to 80 nm, the texture of the overgrown Mo layer improves significantly, marked by a significant reduction in full-width-at-half-maximum of the rocking curve obtained around 220 Bragg reflections. The improved orientation of Mo crystallites promotes the growth of preferentially c-axis oriented columns in the overgrown AlN film as evidenced by analyzes of crystal orientation determined by scanning nano-beam transmission electron diffraction. Atomic-Force Microscopy revealed only a slight deterioration of the surface roughness of AlN films upon introduction of the interlayer. The whole film stack has a total thickness of less than 1 ?m and is, thus, promising for suspended piezoelectric active RF devices.