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Adaptive surface triangulations for 3D process simulation

Adaptive Oberflächentriangulierungen für 3D Prozess-Simulation
 
: Nguyen, P.-H.; Burenkov, A.; Lorenz, J.

Wachutka, G.:
Simulation of Semiconductor Processes and Devices 2004
Wien: Springer, 2004
ISBN: 3-211-22468-8
pp.161-164
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) <2004, München>
English
Conference Paper
Fraunhofer IISB ()
process simulation; surface triangulation; adaptive mesh; ion implantation; simulation; topography simulation

Abstract
We present an enhanced smoothing algorithm in order to minimize the number of nodes in a surface triangulation while at the same time the wafer topography is maintained, and changes of geometry are limited to user-definded tolerances. Refined criteria for the protection of nodes and edges which have not to be removed because of topological reasons have been worked out. An algorithm has been implemented for the extraction of local smoothing tolerance. The use of locoal and material-dependent smoothing tolerance is mandatory for the optimization of surface triangulations. Our topologically correct smoothing algorithms with user-controlled tolerances provides large opportunities for increased efficiency of 3D simulation of various process steps. Some examples for this application are given.

: http://publica.fraunhofer.de/documents/N-23673.html