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Tomographic defect reconstruction of multicrystalline silicon ingots using photoluminescence images of As-Cut wafers and solar cells

: Zeidler, R.; Haunschild, J.; Seeber, B.; Riepe, S.; Höffler, H.; Fertig, F.; Reis, I.; Rein, S.

Fulltext urn:nbn:de:0011-n-2366185 (632 KByte PDF)
MD5 Fingerprint: b9c5fabda3266e06bd7fb1d0195de8b7
Created on: 4.5.2013

Nowak, S. ; European Commission:
27th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2012. DVD-ROM : Proceedings of the international conference held in Frankfurt, Germany, 24 - 28 September 2012
München: WIP-Renewable Energies, 2012
ISBN: 3-936338-28-0
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <27, 2012, Frankfurt>
Conference Paper, Electronic Publication
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Feedstock; Kristallisation und Wafering; Charakterisierung von Prozess- und Silicium-Materialien; Charakterisierung; Qualitätssicherung und Messtechnikentwicklung: Material; Zellen und Module

Photoluminescence images of the side faces of a multi-crystalline silicon brick yield valuable information of the electric quality of the material. However, the signal originates from only the first millimeters of the surface and thus contains no bulk information. If consecutive PL-images of wafers sliced from a whole brick are taken and combined, a tomographic reconstruction of the brick is possible. This approach opens a new insight into the silicon crystallization process and its influence on solar cell parameters. By means of image processing crystal growth, impurities, grain boundaries and defect clusters can be reconstructed three dimensionally helping to identify the origin of certain defects and to further optimize the crystallization process.