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MWT solar cell processing by use of isishape® solar etch® SiD for rear contact and edge isolation

 
: Spribille, A.; Greulich, J.; Lohmüller, E.; Clement, F.; Specht, J.; Biro, D.; Preu, R.; Doll, O.; Tüshaus, C.; Stockum, W.; Köhler, I.

:
Fulltext urn:nbn:de:0011-n-2365927 (313 KByte PDF)
MD5 Fingerprint: 8c7acf07f7aa474df62f6c7f49b77f8a
Created on: 24.4.2013


Nowak, S. ; European Commission:
27th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2012. DVD-ROM : Proceedings of the international conference held in Frankfurt, Germany, 24 - 28 September 2012
München: WIP-Renewable Energies, 2012
ISBN: 3-936338-28-0
pp.2001-2006
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <27, 2012, Frankfurt>
English
Conference Paper, Electronic Publication
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Industrielle und neuartige Solarzellenstrukturen

Abstract
MWT (metal wrap through) solar cells allow higher efficiencies, while only requiring two additional process steps. One of these process steps – the contact isolation between the external n-contact on the rear and the rear p-contact is the focus of this work. The possibility of realizing this isolation by the etching paste isishape® SolarEtch® SiD instead of a laser groove, which was presented at this conference two years ago, is investigated further. Moreover, this rear contact isolation is combined with the paste driven edge isolation simultaneously which was relocated to the rear of the solar cell. In addition to the experimental approach, the two isolation technologies as well as an isolation implemented by a thermal oxide, which works as a diffusion barrier and passivates the surface at the same time, were simulated to validate the experimental results. A proof of concept is given by two MWT cell runs, which show high parallel resistances and indicated higher efficiencies for the isolation by etching paste compared to the isolation by laser grooves. These results are reinforced by the conducted simulation.

: http://publica.fraunhofer.de/documents/N-236592.html