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Advanced anti-reflection and passivation layer systems produced by high-power plasma in the new manz PECVD system

 
: Schwarz, F.; Beckmann, R.; Kohn, N.; Nölker, S.; Kastl, S.; Hofmann, M.; Ferré, R.; Pernau, T.; Wanka, H.; Rentsch, J.

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Fulltext urn:nbn:de:0011-n-2365856 (184 KByte PDF)
MD5 Fingerprint: d4fdffaf976cbc2a85839e07b7b00b39
Created on: 12.4.2013


Nowak, S. ; European Commission:
27th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2012. DVD-ROM : Proceedings of the international conference held in Frankfurt, Germany, 24 - 28 September 2012
München: WIP-Renewable Energies, 2012
ISBN: 3-936338-28-0
pp.1938-1941
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <27, 2012, Frankfurt>
English
Conference Paper, Electronic Publication
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Produktionsanlagen und Prozessentwicklung

Abstract
Manz has developed a novel plasma enhanced chemical vapour deposition (PECVD) system combining both, high productivity and best coating quality. It is based on a high power plasma source (HPP) in a static process. At high power densities, plasma properties change as compared to conventional equipment resulting in an improved film forming mechanism. In the newly developed plasma source, gas conversion factors above 80% could be observed, being the key parameter for film deposition at high throughputs. In cooperation with Fraunhofer ISE the applicability of the system has been tested by analysing coating quality and performance of typical passivation layers on front and back side of standard solar cells. For single layer a-SiNx:H antireflection coatings, efficiencies equal to state-of-the-art cells could be obtained, 17.0% on multi and 18.6% on mono crystalline material. With an advanced layer stack a further increase of 0.1% is possible. Also back side passivation stacks of Al2O3 and SiNx have been produced and minority carrier life times of up to 1.3 ms could be obtained, corresponding to an effective surface recombination velocity of about 6.0 cm/s at illumination densities below 1 sun.

: http://publica.fraunhofer.de/documents/N-236585.html