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Influence of parasitic plasma wrap-around during anti-reflective coating deposition on the formation of an aluminium back surface field

: Krauß, K.; Fertig, F.; Kohn, N.; Rauer, M.; Woehl, R.; Rein, S.

Fulltext urn:nbn:de:0011-n-2365440 (255 KByte PDF)
MD5 Fingerprint: 7f7d3513e9073e357c5bb72fcfb45098
Created on: 4.5.2013

Nowak, S. ; European Commission:
27th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2012. DVD-ROM : Proceedings of the international conference held in Frankfurt, Germany, 24 - 28 September 2012
München: WIP-Renewable Energies, 2012
ISBN: 3-936338-28-0
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <27, 2012, Frankfurt>
Conference Paper, Electronic Publication
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Charakterisierung; Qualitätssicherung und Messtechnikentwicklung: Material; Zellen und Module

In industrial screen-printed aluminium-back-surface-field (Al-BSF) silicon solar cells the standard process for passivating the front surface and optimising its optical properties is the plasma-enhanced chemical vapour deposition (PECVD) of a silicon nitride anti-reflective coating (SiN-ARC). During PECVD of the front side SiNARC in an inline, tray-based reactor, the process plasma can wrap-around to the rear side causing a parasitic SiN deposition. We found, that the thickness of this parasitic SiN layer is in the order of 10 to 30 % of the thickness of the front side SiN-ARC. A corresponding SiN layer is investigated concerning its impact on the saturation current density of the aluminium-doped p+-region formed by two commercially available aluminium pastes. The SiN layer caused a significant decrease in thickness of the p+-region while its saturation current density increased. This implies a loss in open circuit voltage, which is calculated on the basis of a solar cell model and demonstrated experimentally.