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Inline microwave-excited plasma deposition of thin amorphous silicon layers

: Jeurink, J.; Morzè, N. von; Kroely, L.; Hofmann, M.; Rentsch, J.; Preu, R.

Fulltext urn:nbn:de:0011-n-2365355 (168 KByte PDF)
MD5 Fingerprint: fcb36021ae56710585fd1523c1fa0020
Created on: 4.5.2013

Nowak, S. ; European Commission:
27th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2012. DVD-ROM : Proceedings of the international conference held in Frankfurt, Germany, 24 - 28 September 2012
München: WIP-Renewable Energies, 2012
ISBN: 3-936338-28-0
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <27, 2012, Frankfurt>
Conference Paper, Electronic Publication
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Industrielle und neuartige Solarzellenstrukturen; Produktionsanlagen und Prozessentwicklung

Intrinsic hydrogenated amorphous silicon (a-Si:H(i)) passivation layers with a thickness < 7 nm were deposited by an industrial scale inline deposition technique with a very high dynamic deposition rate of around 35 nm*m/min. An implied open circuit voltage near an injection level of one sun of 714 mV on flat mono-crystalline silicon wafers was achieved. The a-Si:H(i) layers were characterized by spectral ellipsometry, infra-red spectroscopy and the quasi-steady-state-photo-conductance method. The highest passivation quality for the inline microwave excited plasma enhanced chemical vapor deposition (MW-PECVD) of a-Si:H(i) layers was achieved at deposition temperatures of 325 - 350 °C. Due to the high deposition temperature no additional annealing is necessary to improve the passivation quality. The layer roughness and the band gap of the deposited a-Si:H(i) layers decrease, as well as the Si-H2 concentration with an increased deposition temperature. A hydrogen dilution of the deposition plasma can be advantageous for the passivation quality of a-Si:H(i) layers at lower temperatures, but detrimental for higher temperatures. Furthermore, a hydrogen dilution was obtained as a method to change the band gap and the surface roughness of the deposited a-Si:H(i) layers. The growth dynamic of the inline deposited a-Si:H(i) layers was studied and a formation of silicon di-hydrid was found to build the initial layer of growing a-Si:H(i) films, as already observed for static deposited a-Si:H(i) in the literature earlier. The inline deposition of these thin a-Si:H(i) layers is the first step to produce silicon heterojunction solar cells by a complete inline process.