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Modelling of silicon solar cells by using an extended two-diode-model approach

 
: Fellmeth, T.; Greulich, J.; Clement, F.; Biro, D.

:
Fulltext urn:nbn:de:0011-n-2365026 (167 KByte PDF)
MD5 Fingerprint: 9548931676e1cf816f3f0e015c9d3196
Created on: 24.4.2013


Nowak, S. ; European Commission:
27th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2012. DVD-ROM : Proceedings of the international conference held in Frankfurt, Germany, 24 - 28 September 2012
München: WIP-Renewable Energies, 2012
ISBN: 3-936338-28-0
pp.1394-1397
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <27, 2012, Frankfurt>
English
Conference Paper, Electronic Publication
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Industrielle und neuartige Solarzellenstrukturen

Abstract
The present work is related to effects originating from the spatial character and therefore referring to the distributed resistance of a silicon solar cell. Two effects are regarded: Firstly, the bending of the illuminated IVcurve particular at open-circuit-conditions towards a lower voltage due to an increased metal/emitter resistance. Secondly, enhanced fill factor losses due to lateral current paths in case of back contact solar cells. A simple approach is presented by taking into account a second one-diode-model in addition to a conventional standalone one-diodemodel. The key idea is simple: By separating these models by a resistor, diodes are forward biased differently as it is the case in real operation conditions and internal current flow leads to a distortion of the measurable global IV-curve. We show that results achieved by the so called "distributed-two-diode-model" give already comparable results to far more complex two-dimensional finite element simulations utilizing Sentaurus TCAD.

: http://publica.fraunhofer.de/documents/N-236502.html