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Ion beam sputter deposition of epitaxial Ag films on native oxide covered Si (100) substrates

: Khare, C.; Gerlach, J.W.; Patzig, C.; Rauschenbach, B.


Applied surface science 258 (2012), No.24, pp.9617-9622
ISSN: 0169-4332
Journal Article
Fraunhofer IWM ()
Ag thin film; epitaxy; sputter deposition; native oxide

Epitaxial Ag films were grown on native oxide covered Si(1 0 0) substrates by an ion beam sputter deposition process at elevated deposition temperatures. At RT, films were observed to be non-epitaxial but with preferred (1 1 1) orientation. However, elevated substrate temperatures and under highly energetic sputter deposition process assist the growth of Ag films, that exhibit an epitaxial relationship with the underlying Si(1 0 0) substrates. With increasing deposition temperature an increase in the crystalline quality was observed with a narrowing mosaic distribution of crystallites and a decrease in the fraction of 1st order twins. The lowest epitaxial growth temperature was observed to be as low as 100 °C.