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Epitaxial GaN films by hyperthermal ion-beam nitridation of Ga droplets

 
: Gerlach, J.W.; Ivanov, T.; Neumann, L.; Höche, T.; Hirsch, D.; Rauschenbach, B.

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Preprint urn:nbn:de:0011-n-2364406 (909 KByte PDF)
MD5 Fingerprint: c85a11d3c94a405fd1f6837fdeaad39d
Created on: 13.11.2013


Journal of applied physics 111 (2012), No.11, Art.113521, 10 pp.
ISSN: 0021-8979
ISSN: 1089-7550
English
Journal Article, Electronic Publication
Fraunhofer IWM ()
hyperthermal ion-beam nitridation; GaN films; Ga droplets

Abstract
Epitaxial GaN film formation on bare 6H-SiC(0001) substrates via the process of transformation of Ga droplets into a thin GaN film by applying hyperthermal nitrogen ions is investigated. Pre-deposited Ga atoms in well defined amounts form large droplets on the substrate surface which are subsequently nitridated at a substrate temperature of 630?°C by a low-energy nitrogen ion beam from a constricted glow-discharge ion source. The Ga deposition and ion-beam nitridation process steps are monitored in situ by reflection high-energy electron diffraction. Ex situ characterization by x-ray diffraction and reflectivity techniques, Rutherford backscattering spectrometry, and electron microscopy shows that the thickness of the resulting GaN films depends on the various amounts of pre-deposited gallium. The films are epitaxial to the substrate, exhibit a mosaic like, smooth surface topography and consist of coalesced large domains of low defect density. Possible transport mechanisms of reactive nitrogen species during hyperthermal nitridation are discussed and the formation of GaN films by an ion-beam assisted process is explained.

: http://publica.fraunhofer.de/documents/N-236440.html