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2012
Conference Paper
Titel
Investigation of excess charge carrier lifetime measurements on samples of arbitrary thickness
Abstract
Carrier lifetime measurements are a very powerful tool in the semi-conductor material characterization as they are very sensitive to variations in the material quality. However, the measurable carrier lifetime always depends on both material and surface properties. A number of techniques have been established to separate these two contributions to the measured lifetime for thin wafers on the one side or thick blocks on the other side. In this work, we present a systematic analysis of the results that can be obtained on samples of arbitrary thickness. In particular we study the measurable transient lifetime on unpassivated and passivated silicon-slices of varying thickness. It turns out that measurement tool specific parameters such as measurement time, sensor penetration length, and length of the initial flash influence the measurable lifetime in a significant way.