Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Three-dimensional simulation of ionized metal plasma vapor deposition

Dreidimensionale Simulation der ionisierten Metall-Plasma-Abscheidung
: Kistler, S.; Bär, E.; Lorenz, J.; Ryssel, H.


Beyer, G.:
Materials for advanced metallization : Proceedings of the European Workshop on Materials for Advanced Metallization 2003: Brussels, Belgium, March 7 - 10, 2004
Amsterdam: Elsevier, 2004 (Microelectronic engineering 76.2004, 1/4)
European Workshop on Materials for Advanced Metallization (MAM) <2004, Brussels>
Conference Paper, Journal Article
Fraunhofer IISB ()
ionized metal plasma deposition; semiconductor process simulation; three-dimensional topography simulation; ionisierte Metall-Plasma-Abscheidung; Halbleiter-Prozess-Simulation; dreidimiensionale Topographie-Simulation

A physically based model for full three-dimensional(3D)feature-scale simulation of ionized metal plasma (IMP) deposition has been implemented. It assumes a dynamical equilibrium of particle fluxes where the sum of delivering (positive ) and consuming (negative) fluxes is zero. This allows to calculate the de position rates of metal at the different positions on the feature surface. The simulator is validated by considering the quasi-2D case of a long trench and comparing the results with data from the literature. Vias are investigated by compar ing the profiles to the results for long trenches. Finally, the application to 3D structures without any symmetry is shown.