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  4. Reliability of 70 nm metamorphic HEMTs
 
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2004
Journal Article
Title

Reliability of 70 nm metamorphic HEMTs

Other Title
Zuverlässigkeit von 70 nm Metamorphen HEMTs
Abstract
The reliability and degradation mechanisms of 70 nm gate length metamorphic InAlAs/InGaAs HEMTs for low noise applications will be presented and discussed. Based an a 10% g(ind m max) failure criterion, a median time to failure of 10(exp 6) h and an activation energy of 1.3 eV in air were found. By comparing the electrical device characteristics before and after stress, gate sinking, ohmic contact degradation, and hot electron degradation were found to be the major failure mechanisms. The stress induced platinum diffusion into the semiconductor was quantified by cross-section TEM.
Author(s)
Dammann, Michael  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Leuther, Arnulf  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Quay, Rüdiger  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Meng, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Konstanzer, Helmer  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Jantz, W.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mikulla, Michael  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
Microelectronics reliability  
DOI
10.1016/j.microrel.2004.01.015
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • gate sinking

  • Eindiffusion des Gatemetalls

  • MHEMT

  • lifetime

  • Lebensdauer

  • degradation mechanisms

  • Degradationsmechanismus

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