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Recombination on locally processed wafer surfaces

: Saint-Cast, P.; Nekarda, J.; Hofmann, M.; Kuehnhold, S.; Preu, R.

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Energy Procedia 27 (2012), pp.259-266
ISSN: 1876-6102
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) <2, 2012, Leuven>
Journal Article, Conference Paper, Electronic Publication
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Charakterisierung; Zellen und Module

This paper is revisiting the problem of recombination on locally processed area (contacts, local doping ...), based on the concept of point recombination rate (p(LPA)). The newly introduced effective point recombination rate (p(eff)) can be easily determined from the effective surface recombination velocity. It also allows predictions and comparisons in most of the practical cases. Further analysis allows the separation of the influence of p(LPA) from the one of the transport of the carrier in a transparent way. Due to its simplicity, transparency and accuracy, the model proposed here is believed to be more suitable to recent local processing technology than the existing analytical models.