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Self-sufficient minority carrier lifetime in silicon from quasi-steady-state photoluminescence

: Giesecke, J.A.; Schubert, M.C.; Warta, W.


Physica status solidi. A 209 (2012), No.11, pp.2286-2290
ISSN: 0031-8965
ISSN: 1862-6300
ISSN: 1521-396X
ISSN: 1862-6319
Journal Article
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Charakterisierung; Zellen und Module

Quasi-steady-state photoluminescence is a versatile technique to determine carrier lifetime in silicon. A recent approach extracts carrier lifetime without a priori information about dopant concentration [Appl. Phys. Lett. 97, 092109 (2010)]. It utilizes the phase shift between a time-modulated optical irradiation and the radiative recombination of a sample, while requiring a minimum of two measurements. The present paper is aimed at a generalization thereof that requires only one measurement. It brings about a substantial experimental simplification, significantly improved accuracy and precision, and it opens up paths to access material properties other than lifetime.