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Electroluminescence analysis of irradiated GaInP/GaInAs/Ge space solar cells

: Hoheisel, R.; Dimroth, F.; Bett, A.W.; Messenger, S.R.; Jenkins, P.P.; Walters, R.J.


McNatt, J.S.:
22nd Space Photovoltaic Research and Technology (SPRAT) Conference 2011. Selected publications : Cleveland, Ohio, 20.-22.09.2011
Amsterdam: Elsevier, 2013 (Solar energy materials and solar cells 108.2013, Special issue)
ISSN: 0927-0248
Space Photovoltaic Research and Technology Conference (SPRAT) <22, 2011, Cleveland/Ohio>
Conference Paper, Journal Article
Fraunhofer ISE ()
Materialien - Solarzellen und Technologie; III-V und Konzentrator-Photovoltaik; Alternative Photovoltaik-Technologien; III-V Epitaxie und Solarzellen; Solarzellen und Bauelemente

Electroluminescence measured at different injection current densities is used to study the effect of particle irradiation on GaInP/GaInAs/Ge triple-junction solar cells. By employing the optoelectronic reciprocity relation, the irradiation-induced degradation in the J-V characteristics of all individual subcells and their underlying diode saturation parameters is derived. Also, the dependence of the solar cell irradiation response on the position of the irradiation-induced non-radiative recombination centers within the cell active region, i.e., the quasi-neutral regions and the space charge region, is discussed.