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Silicon nanocrystals embedded in silicon carbide: Investigation of charge carrier transport and recombination

: Löper, P.; Canino, M.; Qazzazie, D.; Schnabel, M.; Allegrezza, M.; Summonte, C.; Glunz, S.W.; Janz, S.; Zacharias, M.


Applied Physics Letters 102 (2013), No.3, Art. 033507, 4 pp.
ISSN: 0003-6951 (Print)
ISSN: 1077-3118
ISSN: 1931-9401 (online)
European Commission EC
FP7-NMP; 245977; NASCENT
Journal Article
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Farbstoff; Organische und Neuartige Solarzellen; Herstellung und Analyse von hocheffizienten Solarzellen; Tandemsolarzellen auf kristallinem Silicium; Industrielle und neuartige Solarzellenstrukturen; nanocrystals; cells; carbide; crystallization

An illumination-dependent analysis of silicon nanocrystal p-i-n solar cells is presented within the framework of the constant field approximation. Silicon nanocrystals in silicon carbide were prepared by solid-phase crystallization and contacted with doped a-SixC1-x:H. This paper aims at determining the fundamental transport and recombination properties, i.e., the effective mobility lifetime product, of the nanocrystal layer at device level. Illumination-dependent current-voltage curves are modelled with a voltage-dependent collection function with only two free parameters, and excellent agreement is found between theory and experiment. An effective mobility lifetime product of 10(-10) cm(2)/V is derived and confirmed independently from an alternative method.