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Anomalous impurity segregation and local bonding fluctuation in l-Si

Anomale Segregation von Fremdatomen und lokale Bindungsfluktuationen in flüssigem Silicium
: Fisicaro, G.; Huet, K.; Negru, R.; Hackenberg, M.; Pichler, P.; Taleb, N.; La Magna, A.


Physical review letters 110 (2013), No.11, Art. 117801, 5 pp.
ISSN: 0031-9007
ISSN: 1079-7114
Journal Article
Fraunhofer IISB ()
melting laster annealing; MLA; silicon; boron; segregation

Anomalous impurity redistribution after a laser irradiation process in group-IV elements has been reported in numerous papers. In this Letter, we correlate this still unexplained behavior with the peculiar bonding character of the liquid state of group-IV semiconductors. Analyzing the B-Si system in a wide range of experimental conditions we demonstrate that this phenomenon derives from the non-Fickian diffusion transport of B in l-Si. The proposed diffusion model relies on the balance between two impurity states in different bonding configurations: one migrating at higher diffusivity than the other. This microscopic mechanism explains the anomalous B segregation, whereas accurate comparisons between experimental chemical profiles and simulation results validate the model.