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Microbeam mapping of single event latchups and single event upsets in CMOS SRAMs

: Barak, J.; Adler, E.; Fischer, B.E.; Schlogl, M.; Metzger, Stefan


Aerospatiale Espace et Defence, Les Mureaux:
RADECS 1997, Fourth European Conference on Radiation and its Effects on Components and Systems : September 15 - 19, 1997, Cannes, France
Piscataway, NJ: IEEE, 1998
ISBN: 0-7803-4071-X
European Conference on Radiation and its Effects on Components and Systems (RADECS) <4, 1997, Cannes>
Conference Paper
Fraunhofer INT ()

The first simultaneous microbeam mapping of single event upset (SEU) and latchup (SEL) in the CMOS RAM HR165162 is presented. We found that the shapes of the sensitive areas depend on VDD, on the ions being used and on the site on the chip being hit by the ion. In particular, we found SEL sensitive sites close to the main power supply lines between the memory-bit-arrays by detecting the accompanying current surge. All these SELs were also accompanied by bit-flips elsewhere in the memory (which we call "indirect" SEUs in contrast to the well known SEUs induced in the hit memory cell only). When identical SEL sensitive sites were hit farther away from the supply lines only indirect SEL sensitive sites could be detected. We interpret these events as "latent" latchups in contrast to the "classical" ones detected by their induced current surge. These latent SELs were probably decoupled from the main supply lines by the high resistivity of the local supply lines.