Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

SXRT investigations on electrically stressed 4H-SiC PiN diodes for 6.5 kV

 
: Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Hecht, Christian; Peters, Dethard; Friedrichs, Peter; Thomas, Bernd

:
Postprint urn:nbn:de:0011-n-2263727 (368 KByte PDF)
MD5 Fingerprint: dc0952c1f42f61e109b1ede5671eba0b
Created on: 6.2.2013


Lebedev, A.A.:
Silicon Carbide and Related Materials 2012 : Selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2 - 6, 2012, St. Petersburg, Russian Federation
Dürnten: Trans Tech Publications, 2013 (Materials Science Forum 740/742)
ISBN: 978-3-03-785624-6
pp.899-902
European Conference on Silicon Carbide and Related Materials (ECSCRM) <9, 2012, St. Petersburg>
English
Conference Paper, Electronic Publication
Fraunhofer IISB ()
pin diodes; synchrotron x-ray topography; dislocation; stacking fault

Abstract
4H-SiC PiN diodes for 6.5 kV were manufactured on both 4° and 8° off-cut substrates and subjected to an electrical stress test on wafer level and subsequent analysis of structural defects present in the active area of the diodes. For 8° off-cut diodes, the electrical characteristics with respect to leakage current and forward voltage drift are worse than the electrical characteristics of 4° off-cut diodes. Furthermore, a large number of stacking faults was found in 8° off-cut diodes, but little evidence for bipolar degradation was found in 4° off-cut diodes. Therefore, bipolar degradation was significantly reduced by avoiding BPDs in the active area of PiN diodes, i.e. by the use of 4° off-cut substrates. Furthermore, a strong correlation was found between the electrical screening test on wafer level and critical defects.

: http://publica.fraunhofer.de/documents/N-226372.html