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GaAs microstrip-to-waveguide transition operating in the WR-1.5 waveguide band (500 - 750 GHz)

: Hurm, V.; Tessmann, A.; Massler, H.; Leuther, A.; Riessle, M.; Zink, M.; Schlechtweg, M.; Ambacher, O.

Institute of Electrical and Electronics Engineers -IEEE-:
Asia-Pacific Microwave Conference, APMC 2012. Proceedings : Kaohsiung, Taiwan, Dec. 4-7, 2012
New York, NY: IEEE, 2012
ISBN: 978-1-4577-1330-9 (print)
ISBN: 978-1-4577-1331-6 (online)
Asia-Pacific Microwave Conference (APMC) <2012, Kaohsiung/Taiwan>
Conference Paper
Fraunhofer IAF ()

In this paper, we report on the development of a microstrip-to-waveguide transition for the WR-1.5 waveguide band (500 - 750 GHz). The microstrip lines and E-plane probes have been manufactured on 25 ?m thick GaAs substrates. The transmission loss per single microstrip-to-waveguide transition is only 1.0 dB @ 670 GHz. The measured return losses are better than 10 dB up to 720 GHz. The single transition includes a waveguide section with a length of 7.0 mm corresponding to the transitions which will be used in future submillimeter-wave MMIC modules.