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Very low surface recombination velocity of boron doped emitter passivated with plasma-enhanced chemical-vapor-deposited AlOx layers

 
: Saint-Cast, P.; Richter, A.; Billot, E.; Hofmann, M.; Benick, J.; Rentsch, J.; Preu, R.; Glunz, S.W.

:

Wellmann, P. ; European Materials Research Society -EMRS-:
EMRS 2011 Symposium Q "Engineering of Wide Bandgap Semiconductor Materials for Energy Saving" : Held at the spring meeting of the European Materials Research Society, June 2011, Nice, France
Amsterdam: Elsevier, 2012 (Thin solid films 522.2012)
ISSN: 0040-6090
pp.336-339
Symposium Q "Engineering of Wide Bandgap Semiconductor Materials for Energy Saving" <2011, Nice>
European Materials Research Society (Spring Meeting) <2011, Nice>
English
Journal Article, Conference Paper
Fraunhofer ISE ()

Abstract
In this work, we present a systematic study of the surface recombination velocity of boron-diffused Si wafer passivated with plasma-enhanced chemical-vapor-deposited (PECVD) AlOx layers. Saturation current densities in the range of 5.2-38 fA cm(-2) (at 300 K) were achieved on planar surfaces. In particular, we present an industrially relevant boron emitter, allowing for about 700 mV open circuit voltage on textured surfaces, after a firing process. This high passivation quality could be achieved using AlOx passivation layers deposited by PECVD. The passivation quality is found to be equivalent to AlOx layers deposited by plasma-assisted atomic-layer-deposition. A wide range of surface doping concentration (2.5-70x10(18) cm(-3)) was investigated. The emitters used here allow a high resolution in the determination of the surface recombination velocity upper limit. Our simulations, based on Fermi-Dirac statistics, indicate that only very shallow emitters can be used to further increase the resolution on the determination of the surface recombination velocity.

: http://publica.fraunhofer.de/documents/N-223260.html