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2012
Conference Paper
Titel
A high gain SiGe-GaN switching power amplifier in the GHz-range
Abstract
This paper reports a GaN switching power amplifier with a complementary SiGe driver stage in a hybrid setup. The gain of the overall amplifier module is higher than 40 dB. Drain efficiency and an overall lineup efficiency of 60 % and 47 % respectively could be achieved at a bit rate of 1 Gbps when operating with a periodic drive signal. An operation up to 4 Gbps using a pseudo random pulse sequence is demonstrated. To the author's knowledge, this is the first time a GaN switching amplifier with a SiGe driver is demonstrated. Furthermore, such a high gain combined with the efficiencies at bit rates above 1 Gbps has not been presented yet.
Author(s)