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Hall effect characterizations of 4H-SiC MOSFETs: Influence of nitrogen channel implantation

Poster at European Conference on Silicon Carbide and Related Materials, ECSCRM 2012, September 2 - 6, 2012, Saint Petersburg
 
: Mortet, V.; Bedel-Pereira, E.; Bobo, J.; Strenger, C.; Uhnevionak, V.; Burenkov, A.; Cristiano, F.; Bauer, A.

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Poster urn:nbn:de:0011-n-2227813 (628 KByte PDF)
MD5 Fingerprint: 51c00031834f5f15b575cb4d486c8fde
Created on: 12.12.2012


2012, 1 Folie
European Conference on Silicon Carbide and Related Materials (ECSCRM) <9, 2012, St. Petersburg>
English
Poster, Electronic Publication
Fraunhofer IISB ()
4H-SiC; MOSFET; hall effect; hall mobility; charge carrier density; Coulomb scattering; nitrogen implantation

: http://publica.fraunhofer.de/documents/N-222781.html