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Influence of indium content and temperature on Auger-like recombination in InGaN quantum wells grown on (111) silicon substrates

: Galler, B.; Drechsel, P.; Monnard, R.; Rode, P.; Stauss, P.; Froehlich, S.; Bergbauer, W.; Binder, M.; Sabathil, M.; Hahn, B.; Wagner, J.


Applied Physics Letters 101 (2012), No.13, Art.131111, 4 pp.
ISSN: 0003-6951 (Print)
ISSN: 1077-3118
ISSN: 1931-9401 (online)
Journal Article
Fraunhofer IAF ()

High-efficiency InGaN-based light-emitting diodes have been grown on (111) silicon substrates and investigated with regard to efficiency and carrier lifetime as a function of current density. Using a single quantum well active layer ensures a well-defined active volume which enables the precise determination of the recombination coefficients in the ABC rate model for different emission wavelengths and junction temperatures. Good agreement of the resulting C values with calculated Auger coefficients is found both with respect to absolute value as well as their dependence on bandgap energy and temperature.