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  4. A U-band broadband power amplifier MMIC in 100 nm AlGaN/GaN HEMT technology
 
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2012
Conference Paper
Title

A U-band broadband power amplifier MMIC in 100 nm AlGaN/GaN HEMT technology

Abstract
The design and manufacture of a three-stage broadband power amplifier is presented in this paper. The amplifier MMIC is realized using AlGaN/GaN HEMTs with a gate-length of 100 nm in a grounded coplanar transmission line technology. A small-signal gain of over 20 dB was measured in the frequency range from 38 to 62 GHz (U-band) for the designed amplifier. This corresponds to a very high small-signal bandwidth of over 48 %. Related to the current-gain cutoff frequency, the bandwidth of the amplifier is 30 % of f(T) and the gain-bandwidth-product is approximately five times f(T). Furthermore, a high continuous-wave saturated output power of 25.8 dBm (380 mW) and a high saturated power density of over 1 W/mm in the output stage are provided by the MMIC.
Author(s)
Schwantuschke, Dirk  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Brueckner, Peter  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Quay, Rüdiger  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mikulla, Michael  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Ambacher, Oliver  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Kallfass, I.
Mainwork
42th European Microwave Conference, EuMC 2012. Proceedings  
Conference
European Microwave Conference (EuMC) 2012  
European Microwave Week (EuMW) 2012  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • 100 nm AlGaN/GaN

  • millimeter-wave GaN HEMT broadband power amplifier

  • millimeter-wave amplification

  • linear power amplifier

  • U-band

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