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A U-band broadband power amplifier MMIC in 100 nm AlGaN/GaN HEMT technology

: Schwantuschke, D.; Brueckner, P.; Quay, R.; Mikulla, M.; Ambacher, O.; Kallfass, I.

European Microwave Association; Institute of Electrical and Electronics Engineers -IEEE-; IEEE Microwave Theory and Techniques Society:
42th European Microwave Conference, EuMC 2012. Proceedings : 29 Oct -1 Nov 2012, Amsterdam, The Netherlands, part of the 15th European Microwave Week, EuMW 2012
New York, NY: IEEE, 2012
ISBN: 978-2-87487-027-9
ISBN: 978-1-4673-2215-7
European Microwave Conference (EuMC) <42, 2012, Amsterdam>
European Microwave Week (EuMW) <15, 2012, Amsterdam>
Conference Paper
Fraunhofer IAF ()
100 nm AlGaN/GaN; millimeter-wave GaN HEMT broadband power amplifier; millimeter-wave amplification; linear power amplifier; U-band

The design and manufacture of a three-stage broadband power amplifier is presented in this paper. The amplifier MMIC is realized using AlGaN/GaN HEMTs with a gate-length of 100 nm in a grounded coplanar transmission line technology. A small-signal gain of over 20 dB was measured in the frequency range from 38 to 62 GHz (U-band) for the designed amplifier. This corresponds to a very high small-signal bandwidth of over 48 %. Related to the current-gain cutoff frequency, the bandwidth of the amplifier is 30 % of f(T) and the gain-bandwidth-product is approximately five times f(T). Furthermore, a high continuous-wave saturated output power of 25.8 dBm (380 mW) and a high saturated power density of over 1 W/mm in the output stage are provided by the MMIC.