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Dual-band class-ABJ AlGaN/GaN high power amplifier

: Carrubba, V.; Maroldt, S.; Musser, M.; Walcher, H.; Schlechtweg, M.; Quay, R.; Ambacher, O.

European Microwave Association; Institute of Electrical and Electronics Engineers -IEEE-; IEEE Microwave Theory and Techniques Society:
42th European Microwave Conference, EuMC 2012. Proceedings : 29 Oct -1 Nov 2012, Amsterdam, The Netherlands, part of the 15th European Microwave Week, EuMW 2012
New York, NY: IEEE, 2012
ISBN: 978-2-87487-027-9
ISBN: 978-1-4673-2215-7
European Microwave Conference (EuMC) <42, 2012, Amsterdam>
European Microwave Week (EuMW) <15, 2012, Amsterdam>
Conference Paper
Fraunhofer IAF ()
broadband amplifiers; class-J; GaN; high power amplifiers; multiband

This paper presents a dual-band multiharmonic Class-ABJ high power amplifier (PA) realized in AlGaN/GaN technology. In the Class-ABJ theory power and efficiency are theoretically maintained constant for the wide band spectrum frequency due to the ability to accommodate simultaneous fundamental and harmonic reactive terminations. Here it will be shown that by using the Class-ABJ theory, it is possible to optimize power, gain and efficiency for different frequency bands in a high PA design. The realized Class-ABJ power amplifier delivers drain efficiency greater than 55% with output power and gain greater than 42.4-44.4 dBm and 10-11 dB respectively for the two frequency bands 2.05-2.22 GHz and 2.45-2.58 GHz at around 2-3 dB of compression level.