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An integrated 12 Gbps switch-mode driver MMIC with 5 V(PP) for digital transmitters in 100 nm GaN technology

 
: Maroldt, S.; Brueckner, P.; Quay, R.; Ambacher, O.; Maier, S.; Wiegner, D.; Pascht, A.

European Microwave Association:
7th European Microwave Integrated Circuits Conference, EuMIC 2012. Proceedings : 29-30 Oct 2012, Amsterdam, The Netherlands, European Microwave Week
Louvain-la-Neuve: European Microwave Assiciation, 2012
ISBN: 978-2-87487-028-6
pp.115-118
European Microwave Integrated Circuits Conference (EuMIC) <7, 2012, Amsterdam>
European Microwave Week (EuMW) <15, 2012, Amsterdam>
English
Conference Paper
Fraunhofer IAF ()
class-S; digital transmitter; driver circuit; gallium nitride; switch-mode

Abstract
A digital switch-mode amplifier MMIC integrating an differential amplifier and driver was realized in an 100 nm GaN technology with a transit frequency of 80 GHz. The circuit operates up to a bit rate of 12 Gbps while it was designed for a current-mode amplifier chain. Each of the two driver output channels delivers an adjustable output voltage swing of up to 5 V(PP). Due to the differential amplifier input stage with a very low minimum input voltage swing of 0.5 VPP the MMIC allows a flexible operation used as limiting amplifier or digital preamplifier for a GaN final switch-mode stage. The high output power density of the GaN technology allows a further integration of the final switch-mode power amplifier stage which enables for the first time a fully integrated high power digital transmitter in GaN.

: http://publica.fraunhofer.de/documents/N-221340.html