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An H-band low-noise amplifier MMIC in 35 nm metamorphic HEMT technology

 
: Weber, R.; Hurm, V.; Massler, H.; Weissbrodt, E.; Tessmann, A.; Leuther, A.; Nähri, T.; Kallfass, I.

European Microwave Association:
7th European Microwave Integrated Circuits Conference, EuMIC 2012. Proceedings : 29-30 Oct 2012, Amsterdam, The Netherlands, European Microwave Week
Louvain-la-Neuve: European Microwave Assiciation, 2012
ISBN: 978-2-87487-028-6
pp.187-190
European Microwave Integrated Circuits Conference (EuMIC) <7, 2012, Amsterdam>
European Microwave Week (EuMW) <15, 2012, Amsterdam>
English
Conference Paper
Fraunhofer IAF ()
low-noise amplifier (LNA); metamorphic high electron mobility transistor (mHEMT); H-band (220-325 GHz); noise figure (NF); millimeter-wave monolithic integrated circuit (MMIC); grounded coplanar waveguide (GCPW); cascode

Abstract
In this paper, we present the development and characterization of an H-band (220 - 325 GHz) low-noise amplifier MMIC, realized in metamorphic HEMT technology with a gate length of 35 nm. The active devices in the realized three-stage LNA are common-source and common-gate transistors connected in cascode configuration. The LNA circuit achieves a linear gain of 26.3 dB with a 3-dB-bandwidth from 218 to 260 GHz. The measured noise figure of the LNA is 6.1 dB in the frequency range around 243 GHz.

: http://publica.fraunhofer.de/documents/N-221337.html