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Static and dynamic properties of multi-section InGaN-based laser diodes

: Sulmoni, L.; Lamy, J.-M.; Dorsaz, J.; Castiglia, A.; Carlin, J.F.; Scheibenzuber, W.G.; Schwarz, U.T.; Zeng, X.; Boiko, D.L.; Grandjean, N.


Journal of applied physics 112 (2012), No.10, Art.103112, 8 pp.
ISSN: 0021-8979
ISSN: 1089-7550
Journal Article
Fraunhofer IAF ()

We have studied multi-section InGaN multiple-quantum-well (MQW) laser diodes grown on c-plane freestanding GaN substrate consisting of an absorber section (AS) and an amplifier gain section. As a result of the interplay between external bias applied to the AS and the internal piezoelectric and spontaneous polarization fields inherent to c-plane InGaN MQWs, the devices exhibit non-linear non-monotonic variations of the threshold current due to the quantum-confined Stark effect that takes place in the AS MQWs. We report on how this effect tailors the lasing characteristics and lasing dynamics, leading from a steady-state cw lasing regime for an unbiased AS to self-pulsation and Q-switching regimes at high negative absorber bias.