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Phosphoric Anti-Reflective Coatings as Dopant Source and Front-Side Passivation for Industrial Silicon Solar Cell Manufacturing

: Trogus, D.; Seiffe, J.; Pillath, F.; Hofmann, M.; Wolf, A.; Rentsch, J.

Fulltext urn:nbn:de:0011-n-2210689 (235 KByte PDF)
MD5 Fingerprint: afb8ac23dc824db5eb916a75770bbe7e
Created on: 7.12.2012

European Commission:
26th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC. Proceedings : 5th to 9th September 2011 at the CCH - Congress Centre and International Fair Hamburg in Germany
München: WIP-Renewable Energies, 2011
ISBN: 3-936338-27-2
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <26, 2011, Hamburg>
Conference Paper, Electronic Publication
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Industrielle und neuartige Solarzellenstrukturen; Produktionsanlagen und Prozessentwicklung

In this paper, we present the development and investigation of a multifunctional stack-layer plasma deposition for silicon solar cells. The thin stack layer works as phosphorous source in high-temperature diffusion and remains afterwards as front surface passivation and anti-reflective coating (ARC). This way the production of solar cells can be significantly simplified as the wet-chemical removal of phosphosilicate glass (PSG) becomes redundant and the diffusion step could be realised without a POCl3 atmosphere in an open inline furnace system. In this study it is shown that it is possible to deposit such a layer in an industrial-type PECVD system using a double-layer stack of a thin PSG layer and a silicon nitride capping layer. The investigated process steps results in an emitter saturation current j0e < 120 fA/cm2 for a emitter sheet resistance of RE < 65 /sq..