Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Electrical Properties of Recrystallised SiC Films from PECVD Precursors for Silicon Quantum Dot Solar Cell Applications

 
: Schnabel, M.; Witzky, A.; Löper, P.; Gradmann, R.; Künle, M.; Janz, S.

:
Fulltext urn:nbn:de:0011-n-2210621 (321 KByte PDF)
MD5 Fingerprint: 610593119fcadd7395465dd83ba3327a
Created on: 7.12.2012


European Commission:
26th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC. Proceedings : 5th to 9th September 2011 at the CCH - Congress Centre and International Fair Hamburg in Germany
München: WIP-Renewable Energies, 2011
ISBN: 3-936338-27-2
pp.454-460
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <26, 2011, Hamburg>
English
Conference Paper, Electronic Publication
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Farbstoff; Organische und Neuartige Solarzellen; Tandemsolarzellen auf kristallinem Silicium; Kristalline Silicium- Dünnschichtsolarzellen

Abstract
Silicon carbide (SiC) is a promising host material for silicon quantum dots (Si QDs), which are being investigated as absorber materials for tandem solar cells based solely on crystalline silicon. Amorphous silicon carbide (a-SiC) films are deposited by plasma-enhanced chemical vapour deposition (PECVD) and annealed under the same conditions usually used to precipitate Si QDs. During annealing, the films shrink by 20%, and some a-SiC transforms into SiC nanocrystals (nc-SiC) about 3 nm in size. P-type doping with boron is found to inhibit SiC crystallisation and lower conductance as compared to intrinsic films. N-type doping with phosphorus on the other hand promotes SiC crystallisation and leads to a higher conductance. The trends in conductance are ascribed solely to the effect of the dopant on crystallisation. Al, Ti, Cr, Ni20%Cr, and ITO are all found to form Ohmic contacts to the SiC films on deposition, with no change in contact properties brought about by sintering at 425°C. Temperature-dependent conductivity measurements on intrinsic SiC films reveal two distinct activation energies; 65 meV below 200 K, and 158 meV above 200 K.

: http://publica.fraunhofer.de/documents/N-221062.html