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Verification of near-interface traps by electrical measurements on 4H-SiC n-channel MOSFETs

Presentation held at the European Conference on Silicon Carbide and Related Materials, ECSCRM 2012, September 2 - 6, 2012, Saint Petersburg
: Uhnevionak, V.; Strenger, C.; Burenkov, A.; Mortet, V.; Bedel-Pereira, E.; Cristiano, F.; Bauer, A.; Pichler, P.

presentation urn:nbn:de:0011-n-2201282 (594 KByte PDF)
MD5 Fingerprint: fe0ef24d1c8b5427ce39073b73a498cb
Created on: 29.11.2012

2012, 18 Folien
European Conference on Silicon Carbide and Related Materials (ECSCRM) <9, 2012, St. Petersburg>
Presentation, Electronic Publication
Fraunhofer IISB ()
4H-SiC MOSFETs; SiC/SiO2 interface; NIT; donor and acceptor types of traps

4H-SiC n-channel lateral MOSFETs were manufactured and characterized electrically by current-voltage measurements and by numerical simulation. To describe the observed electrical characteristics of the SiC MOSFETs, Near-Interface Traps (NIT) and mobility degradation models were included in the simulation. The main finding of the simulation is that two models for the NIT states in the upper part of the SiC bandgap are able to describe the electrical data equally well. In one of them, acceptor-like traps and fixed charge are considered while in a newly developed one, donor-like traps are taken into account also.