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A high gain 600 GHz amplifier TMIC using 35 nm metamorphic HEMT technology

: Tessmann, A.; Leuther, A.; Massler, H.; Seelmann-Eggebert, M.


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012 : 14-17 October 2012, La Jolla, Calif., USA
New York, NY: IEEE, 2012
ISBN: 978-1-4673-0928-8
4 pp.
Compound Semiconductor Integrated Circuit Symposium (CSICS) <34, 2012, La Jolla/Calif.>
Conference Paper
Fraunhofer IAF ()
airbridge type transmission line (ABTL); benzocyclobutene (BCB); grounded coplanar waveguide (GCPW); metamorphic high electron mobility transistor (mHEMT); submillimeter-wave amplifier; terahertz monolithic integrated circuit (TMIC); WR-1.5 waveguide band

In this paper, we are presenting two terahertz monolithic integrated circuits (TMICs) for use in next-generation radar and spectroscopy systems operating in the WR-1.5 waveguide band (500 - 750 GHz). Both amplifier circuits have been realized using a 35 nm InAlAs/InGaAs based metamorphic high electron mobility transistor (mHEMT) technology in combination with a benzocyclobutene (BCB) encapsulation to minimize the device parasitics. Furthermore, airbridge type transmission lines (ABTL) and grounded coplanar circuit topology (GCPW) were applied, leading to a compact chip size and excellent gain performance in the submillimeter-wave frequency regime beyond 500 GHz. A realized six-stage ABTL amplifier circuit demonstrated a small-signal gain of more than 20 dB between 502 and 516 GHz, while a six-stage grounded coplanar TMIC achieved a linear gain of 20.3 dB at 610 GHz and more than 18 dB over the bandwidth from 557 to 616 GHz. The total chip size of both submillimeter-wave amplifier circuits was only 0.15 mm(2).