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Static and dynamic characterization of AlN and nanocrystalline diamond membranes

: Knöbber, F.; Zürbig, V.; Heidrich, N.; Hees, J.; Sah, R.E.; Baeumler, M.; Leopold, S.; Pätz, D.; Ambacher, O.; Lebedev, V.


Physica status solidi. A 209 (2012), No.10, pp.1835-1842
ISSN: 0031-8965
ISSN: 1862-6300
ISSN: 1521-396X
ISSN: 1862-6319
Journal Article
Fraunhofer IAF ()
aluminium nitride; laser Doppler vibrometry; nanocrystalline diamond; residual stress

In this work, AlN and nanocrystalline diamond thin films as well as multi-layer structures on their basis are characterized towards their mechanical properties. In particular, the Young's modulus E and the residual stress ? are obtained by wafer bow measurements of thin films as well as by bulge experiments and vibration measurements of freestanding membranes. Depending on the growth conditions, the AlN thin films, deposited by reactive magnetron sputtering, revealed values of sigma about +300 up to +400 MPa and E about 370 GPa, while the diamond films, grown by microwave plasma CVD, showed values of sigma about -60 to +60 MPa and E about 870 up to 1000 GPa. The values and the accuracy of the characterization techniques used are discussed and their limits are demonstrated.