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On the mechanism of potential-induced degradation in crystalline silicon solar cells

: Bauer, J.; Naumann, V.; Grosser, S.; Hagendorf, C.; Schütze, M.; Breitenstein, O.


Physica status solidi. Rapid research letters 6 (2012), No.8, pp.331-333
ISSN: 1862-6254
ISSN: 1862-6270
Journal Article
Fraunhofer CSP ()

Multicrystalline standard p-type silicon solar cells, which undergo a potential induced degradation, are investigated by different methods to reveal the cause of the degradation. Microscopic local ohmic shunts are detected by electron-beam-induced current measurements, which correlate with the sodium distribution in the nitride layer close to the Si surface imaged by time-of-flight secondary ion mass spectroscopy. The results are compatible with a model of the formation of a charge double layer on or in the nitride, which inverts the emitter.