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Influence of AlGaN barrier thickness on electrical and device properties in Al0.14Ga0.86N/GaN high electron mobility transistor structures

: Waltereit, P.; Bronner, W.; Musser, M.; Raay, F. van; Dammann, M.; Cäsar, M.; Müller, S.; Kirste, L.; Köhler, K.; Quay, R.; Mikulla, M.; Ambacher, O.


Journal of applied physics 112 (2012), No.5, Art. 053718, 5 pp.
ISSN: 0021-8979
ISSN: 1089-7550
Journal Article
Fraunhofer IAF ()

We investigate the influence of the AlGaN barrier thickness in Al0.14Ga0.86N/GaN heterostructures on both the electrical properties of the heterostructure itself as well as on high electron mobility transistors fabricated on these structures. With increasing barrier thickness, we observe decreasing sheet resistances, transconductances, and threshold voltages. The observed changes are welldescribed by modelling. We demonstrate that an increase in the barrier thickness in AlGaN/GaN heterostructures results in an increase in available high-frequency input power swing before turn-on of the Schottky gate. The device long-term stability under direct current stress is not affected by the increase in barrier thickness as shown by on-wafer reliability tests at 150 °C base plate temperature. These results pave the way towards AlGaN/GaN transistors offering high robustness under extreme mismatch conditions as well as excellent high-frequency power performance.