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Effect of oxygen on the diffusion of nitrogen implanted in silicon

Auswirkungen von Sauerstoff auf die Diffusion von in Silicium implantiertem Stickstoff
: Mannino, G.; Privitera, V.; Scalese, S.; Libertino, S.; Napolitani, E.; Pichler, P.; Cowern, N.E.B.


Electrochemical and solid state letters 7 (2004), No.8, pp.G161-G163
ISSN: 1099-0062
ISSN: 1944-8775
Journal Article
Fraunhofer IISB ()
silicon; nitrogen; diffusion; oxygen

Nitrogen implants were performed in Si wafers of variable purity, i.e., epitaxial layers, float zone, and Czochralski silicon (CZ-Si). The diffusion behavior of nitrogen reported by Hockett in Appl. Phys. Lett., 54, 1793 (1989), where nitrogen diffuses for several micrometers at temperatures as low as 750°C and the profiles assume a "double-peak" structure, is peculiar of CZ-S i. In contrast, in pure epitaxial-Si, nitrogen is immobile at low temperature but, at a higher temperature (850°C), the broadening of the nitrogen profile never assumes the shape observed in CZ-Si. Our results suggest that oxygen determines the shape of the nitrogen diffusion profiles.