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Simulation of BF3 plasma immersion ion implantation into silicon

Simulation von BF3-Plasmaimmersionsionenimplantation in Silicium
: Burenkov, A.; Hahn, A.; Spiegel, Y.; Etienne, H.; Torregrosa, F.

Abstract urn:nbn:de:0011-n-2142470 (91 KByte PDF)
MD5 Fingerprint: c175cccd9775c133c343f28f5f5c8cf1
Created on: 27.10.2012

19th International Conference on Ion Implantation Technology, IIT 2012. Program and Abstracts : Congress center Valladolid, Spain, June 25-29, 2012
Valladolid, 2012
International Conference on Ion Implantation Technology (IIT) <19, 2012, Valladolid>
Conference Paper, Electronic Publication
Fraunhofer IISB ()
BF3; plasma; Immersion; ion implantation; boron; silicon

Plasma immersion ion implantation from a BF3 plasma into crystalline (100) silicon was performed using the PULSION plasma doping tool. Implanted boron profiles were measured with the SIMS method and simulated using models with different levels of sophistication. The physical implantation model is based on an analytical energy distribution for ions from the plasma and uses a Monte-Carlo simulation code. An analytical model of plasma immersion ion implantation that assumes a uniform and isotropic implantation was implemented in a software module called IMP3D. The functionality of this module which was initially envisaged for the three-dimensional simulation of conventional ion implantation was extended to plasma immersion ion implantation and examples of 2D and 3D simulations from this are presented.