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A single-chip optical CMOS detector with in-situ demodulating and integrating readout for next-generation optical storage systems

: Hehemann, I.; Brockherde, W.; Hofmann, H.; Kemna, A.; Hosticka, B.J.


IEEE journal of solid-state circuits 39 (2004), No.4, pp.629-635
ISSN: 0018-9200
Symposium on VLSI Technology <23, 2003, Kyoto>
Conference Paper, Journal Article
Fraunhofer IMS ()
optical detector; optical storage system; optoelectronic integrated circuit; transimpedance amplifier; CMOS; optischer Speicher; Optoelektronik; IC (integrierte Schaltung); Verstärker

In this paper, a new fully integrated detector architecture for pick-up units in optical storage systems is presented. It features a special high-frequency photodiode constellation for data recovery suitable for the needs of future optical storage systems. The functionality of standard detectors has been extended by using an additional 5 x 5 low-frequency photodiode matrix for in-situ determination of the average spatial light power distribution across the detector. The six high-frequency paths exhibit band-widths up to 135 MHz, and the maximum clock frequency for the low-frequency paths is 20 MHz. The detector has been fabricated in a standard 0.6-µm CMOS process, and it operates at a 3.3-V power supply and occupies 1.78 x 1.58 mm2.