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SiN:H anti-reflection coatings for c-Si solar cells by large scale inline sputtering

: Wolke, W.; Jäckle, A.; Preu, R.; Wieder, S.; Ruske, M.

Fulltext urn:nbn:de:0011-n-2099494 (568 KByte PDF)
MD5 Fingerprint: e1fab3a50e6dff191baed3cc7c2f7feb
Created on: 25.10.2012

Hoffmann, W.:
Nineteenth European Photovoltaic Solar Energy Conference 2004. Vol.1 : Proceedings of the international conference held in Paris, France, 7 - 11 June 2004
München: WIP, 2004
ISBN: 3-936338-14-0
ISBN: 88-89407-02-6
European Photovoltaic Solar Energy Conference <19, 2004, Paris>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

This paper presents the investigation into the use of the sputtering technology for deposition of passivating SiNx:H anti-reflection layers on multi-crystalline silicon solar cells. The experiments were carried out on a large area inline sputtering system - manufactured by APPLIED FILMS - that features a Twin-Magnetron mid frequency cathode system which provides excellent uniformity of thickness and high deposition rates. By adding ammonia to the process gases the hydrogen content of the sputtered layers could easily be varied over a wide range leading to cell efficiencies of 15,3% on multi-crystalline silicon solar cells. By IQE and FTIR analysis the sputtered layers were compared to PECVD-reference SiNx:H layers showing equal surface passivation and excellent bulk passivation properties of sputtered SiNx:H anti-reflection coatings.