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Evaluation of dopant sources and deposition methods suitable for in-line diffusion in the PV industry

: Voyer, C.; Biro, D.; Emanuel, G.; Preu, R.; Koriath, J.; Wanka, H.

Fulltext urn:nbn:de:0011-n-2099286 (818 KByte PDF)
MD5 Fingerprint: 51713b1840ed5101b4803482b0236fb8
Created on: 13.10.2012

Hoffmann, W.:
Nineteenth European Photovoltaic Solar Energy Conference 2004. Vol.1 : Proceedings of the international conference held in Paris, France, 7 - 11 June 2004
München: WIP, 2004
ISBN: 3-936338-14-0
ISBN: 88-89407-02-6
European Photovoltaic Solar Energy Conference <19, 2004, Paris>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Several methods of depositing the phosphorus-doped material on silicon wafers prior to in-line emitter diffusion were evaluated, and ultrasonic spraying at room temperature of an aqueous solution of phosphoric acid was selected for the development of a diffusion process. The addition of a small quantity of a commercial surfactant to the solution allowed the sprayed droplets to completely wet the hydrophobic silicon surface, instead of forming a layer of coalesced droplets. Wafers covered with the continuous liquid layer were shortly baked and then heated up to high temperatures in an in-line diffusion furnace. Sheet resistance was varied within the range commonly used for industrial solar cells (37-62 ohm/sq) and was satisfactorily homogeneous across the wafer.