Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Spatially resolved characterisation of silicon as-cut wafers with photoluminescence imaging

: The, M.; Giesecke, J.; Kasemann, M.; Warta, W.

Fulltext urn:nbn:de:0011-n-2099228 (376 KByte PDF)
MD5 Fingerprint: 46f67f02987c6cc7b03c927c4dc4d7a5
Created on: 21.9.2012

Lincot, D. ; European Commission, Joint Research Centre -JRC-:
The compiled state-of-the-art of PV solar technology and deployment. 23rd European Photovoltaic Solar Energy Conference, EU PVSEC 2008. Proceedings. CD-ROM : Held in Valencia, Spain, 1 - 5 September 2008; Proceedings of the international conference
München: WIP-Renewable Energies, 2008
ISBN: 3-936338-24-8
ISBN: 978-3-936338-24-9
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <23, 2008, Valencia>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

The characterisation of silicon as-cut wafers is important for process control in the solar cell production, since it can serve as starting material quality inspection and give information about a change of material properties caused by different process steps. In particular spatially resolved characterisation tools such as Photoluminescence Imaging are useful as an information source. Due to the low signal in a luminescence image of an as-cut wafer a major problem is superimposed excitation reflection light when the detection occurs from the front side of the wafer. We present a method which eliminates the spurious reflection contribution by a special image correction. The image correction is based on the measurement of the reflection topology of the as-cut wafer surface separately from the luminescence intensity.