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Light-induced lifetime degradation in hydrogenated multicrystalline cast silicon substrates

: Takaki, A.; Itakura, Y.; Hashigami, H.; Dhamrin, M.; Glunz, S.; Saitoh, T.

McNelis, B. ; WIP - Renewable Energies, München:
17th European Photovoltaic Solar Energy Conference 2001. Vol.2 : Proceedings of the international conference held in Munich, Germany, 22 - 26, October 2001
München: WIP-Renewable Energies, 2002
ISBN: 3-936338-07-8
ISBN: 88-900442-3-3
European Photovoltaic Solar Energy Conference <17, 2001, München>
Conference Paper
Fraunhofer ISE ()

Light-induced lifetime degradation in boron-doped p-type multicrystalline cast silicon (mc-Si) substrates has been studied with regard to lifetime distribution. The degraded lifetime was recovered by annealing at temperatures above approximately 200°C. The degradation observed is similar to that for low-resistivity boron-doped p-type Czochralski silicon (Cz-Si). The lifetime distribution of the degraded state becomes asymmetric due to the degradation in a high lifetime region. The light-induced lifetime degradation for mc-Si substrates is related to the substitutional boron and interstitial oxygen complex like that for Cz-Si. Hydrogenation is effective to reduce the content of the light-induced boron-oxygen complex and to suppress the light-induced lifetime degradation for mc-Si.