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Characterization of silicon solar cells with interdigitated contacts

: Schumacher, J.O.; Dicker, J.; Glunz, S.; Hebling, C.; Knobloch, J.; Warta, W.; Wettling, W.

Fulltext urn:nbn:de:0011-n-2098977 (522 KByte PDF)
MD5 Fingerprint: a0e998e22b74e735fdde4e7ba3376067
Created on: 9.11.2012

IEEE Electron Devices Society; Institute of Electrical and Electronics Engineers -IEEE-:
Twenty Sixth IEEE Photovoltaic Specialists Conference 1997. Conference record : Anaheim Marriott, Anaheim, CA, 29 September - 03 October 1997
Piscataway, NJ: IEEE Service Center, 1997
ISBN: 0-7803-3767-0
ISBN: 0-7803-3768-9
Photovoltaic Specialists Conference <26, 1997, Anaheim/Calif.>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

The characterization of two types of silicon solar cells with interdigitated metal grids processed at Fraunhofer-ISE is presented in this paper: the 19.2% efficient thin-film silicon on insulator (SOI) cell and a 21.4% rear contact cell (RCC). The spectrally resolved reflection and absorption properties of the cells are simulated with the 3D ray tracing program RAYN. Optical generation profiles calculated with RAYN are utilized in the device simulator DESSIS to model the observed electrical properties. The successful modelling allows predictions of the performance of thinner SOI cells and RCC cells processed from lower quality material.