Abstract
Luminescence spectroscopy is applied to multicrystalline p-type silicon. Photoluminescence spectroscopy, cathodoluminescence spectrum imaging, and defect luminescence imaging are used for the characterisation at temperatures from 21 K to 300 K. A defect line, persistent up to ambient temperature, was found in the photoluminescence spectrum of highly defective areas of the silicon samples under test. The line was associated with the dislocation characteristic emission and identified as the D2' band. Temperature dependent analysis of the peak position and peak intensity together with the application of a theoretical description of the thermal deactivation process of the luminescence transitions are used to estimate the energy positions of the involved defects.