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  4. Spatially resolved luminescence spectroscopy on multicrystalline silicon
 
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2008
Conference Paper
Title

Spatially resolved luminescence spectroscopy on multicrystalline silicon

Abstract
Luminescence spectroscopy is applied to multicrystalline p-type silicon. Photoluminescence spectroscopy, cathodoluminescence spectrum imaging, and defect luminescence imaging are used for the characterisation at temperatures from 21 K to 300 K. A defect line, persistent up to ambient temperature, was found in the photoluminescence spectrum of highly defective areas of the silicon samples under test. The line was associated with the dislocation characteristic emission and identified as the D2' band. Temperature dependent analysis of the peak position and peak intensity together with the application of a theoretical description of the thermal deactivation process of the luminescence transitions are used to estimate the energy positions of the involved defects.
Author(s)
Schubert, Martin C.  
Gundel, Paul
The, Manuel
Warta, Wilhelm  
Romero, M.J.
Ostapenko, S.
Arguirov, T.
Mainwork
The compiled state-of-the-art of PV solar technology and deployment. 23rd European Photovoltaic Solar Energy Conference, EU PVSEC 2008. Proceedings. CD-ROM  
Conference
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) 2008  
File(s)
Download (321.68 KB)
DOI
10.24406/publica-r-361694
10.4229/23rdEUPVSEC2008-1AP.1.5
Language
English
Fraunhofer-Institut für Solare Energiesysteme ISE  
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