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Plasma etching for industrial in-line processing of c-si solar cells

Presentation held at the 19th European Photovoltaic Solar Energy Conference
: Rentsch, J.; Emanuel, G.; Schetter, C.; Aumann, T.; Theirich, D.; Gentischer, J.; Roth, K.; Fritzsche, M.; Dittrich, K.-H.; Preu, R.

Fulltext urn:nbn:de:0011-n-2098155 (204 KByte PDF)
MD5 Fingerprint: f1cb8669cfcabdc3a258b885376aaf01
Created on: 28.11.2012

2004, 4 pp.
European Photovoltaic Solar Energy Conference <19, 2004, Paris>
Presentation, Electronic Publication
Fraunhofer ISE ()

Thinner wafers and the reduction of breakage losses make it attractive for solar cell manufacturers to use in-line production systems. Closing the gap between diffusion and in-line silicon nitride deposition systems a plasma etching system has been designed suitable for a throughput of 1000 wafer/h with an automated transport system. Different plasma sources appropriate for etching large areas were tested and etch rates of around 13 µm/min for saw damage removal could be reached with sufficient homogeneity. For phosphorous glass (PSG) removal selectivities between PSG and silicon above 10 could be achieved with a CF4/C2H4 etch gas mixtures with sufficient PSG etch each rates of around 80 nm/min. Solar cells processed with the plasma PSG removal step show slightly decreased efficiencies attributed to the plasma induced damage to the emitter layer and the silicon bulk. Further process optimization is needed to reduce this damage.