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Advanced lifetime spectroscopy - methodology and experimental proof

: Rein, S.; Glunz, S.W.

Fulltext urn:nbn:de:0011-n-2098059 (280 KByte PDF)
MD5 Fingerprint: 71912f8e403fe576aeba695ef061623e
Created on: 13.10.2012

Hoffmann, W.:
Nineteenth European Photovoltaic Solar Energy Conference 2004. Vol.1 : Proceedings of the international conference held in Paris, France, 7 - 11 June 2004
München: WIP, 2004
ISBN: 3-936338-14-0
ISBN: 88-89407-02-6
European Photovoltaic Solar Energy Conference <19, 2004, Paris>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Lifetime spectroscopy (LS) always allows a complete defect characterization on one single sample if data from injection- and temperature-dependent LS (TDLS and IDLS) are combined. To allow an accurate modeling of entire TDLS curves, several physical extensions are introduced in the basic Shockley-Read-Hall (SRH) model. A new routine for data evaluation allows a transparent SRH analysis of IDLS and TDLS data and makes it possible to assess the accuracy and consistency of the determined defect parameters. Applied to LS data from a molybdenum-contaminated silicon sample, the advanced lifetime spectroscopy allows the identification of a known molybdenum donor level at E(ind t)-E(ind V)=0.317 eV with an enhanced electron/hole capture cross section ratio k:= ohm(ind n)/ ohm(ind p)=13. The good agreement with literature and the consistency of the LS results manifest the potential of the proposed advanced LS analysis. If the value for ohm(ind p) is taken from literature, the unknown electron capture cross section of the molybdenum donor level is determined as ohm(ind n)=7.8×10(exp -15) cm2.