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Temperature- and injection-dependent lifetime spectroscopy (T-IDLS): Advanced analysis

: Rein, S.; Diez, S.; Glunz, S.W.

Fulltext urn:nbn:de:0011-n-2098041 (486 KByte PDF)
MD5 Fingerprint: 180fcf06a704fabb001b5b5ab6457206
Created on: 26.10.2012

Hoffmann, W.:
Nineteenth European Photovoltaic Solar Energy Conference 2004. Vol.1 : Proceedings of the international conference held in Paris, France, 7 - 11 June 2004
München: WIP, 2004
ISBN: 3-936338-14-0
ISBN: 88-89407-02-6
European Photovoltaic Solar Energy Conference <19, 2004, Paris>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Lifetime spectroscopy (LS) is a highly sensitive diagnostic tool for the identification of impurities in semiconductors. However, the special technique of temperature- and injection-dependent lifetime spectroscopy (TIDLS) has not yet allowed unambiguous spectroscopic results. To solve this problem, a new data evaluation procedure is introduced, which is based on the determination of the defect-parameter solution surfaces (DPSS) of the individual T-IDLS curves and thus allows to perform the required simultaneous SRH analysis of the whole set of T-IDLS curves with maximum transparency. The application of the advanced DPSS analysis on a set of T-IDLS curves, measured on a molybdenum-contaminated silicon sample in an extended temperature range from 220 to 470 K, allowed for the first time to determine exact defect parameters from T-IDLS data - in good agreement with results from literature - and to estimate the accuracy of the spectroscopic result quantitatively. Moreover, the advanced DPSS analysis provides deeper insight into the spectroscopic potential of T-IDLS and reveals the decisive impact of the investigated temperature range on the quality of the spectroscopic result.