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Characterization and numerical modeling of the temperature-dependent behavior of GaAs solar cells

: Philipps, S.P.; Stetter, D.; Hoheisel, R.; Hermle, M.; Dimroth, F.; Bett, A.W.

Fulltext urn:nbn:de:0011-n-2097670 (151 KByte PDF)
MD5 Fingerprint: d5da1487ed96f8541e45f32727269046
Created on: 1.9.2012

Lincot, D. ; European Commission, Joint Research Centre -JRC-:
The compiled state-of-the-art of PV solar technology and deployment. 23rd European Photovoltaic Solar Energy Conference, EU PVSEC 2008. Proceedings. CD-ROM : Held in Valencia, Spain, 1 - 5 September 2008; Proceedings of the international conference
München: WIP-Renewable Energies, 2008
ISBN: 3-936338-24-8
ISBN: 978-3-936338-24-9
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <23, 2008, Valencia>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

This paper presents results of a study on the temperature-dependent behavior of GaAs single-junction solar cells, in which both experimental and simulation tools were used. In order to enable measurements at different temperatures a cryostat was integrated into the corresponding experimental setup at Fraunhofer ISE. Measurements of the external quantum efficiency (EQE) and the IV curve under illumination were carried out in a wide temperature range between 200 K and 400 K. An exemplary GaAs solar cell was modeled numerically in a semiconductor simulation environment to obtain a deeper understanding of the cellâ s temperature-dependent behavior as well as to enable future structure optimization for different operating temperatures.